N-channel enhancement mode power MOSFET with 30V drain-source voltage and 45A continuous drain current. Features U-MOS IV process technology for low on-resistance of 3.3mOhm at 10V. Housed in an 8-pin SOP Advance package with heat sinked, no-lead surface mount design, measuring 5x5x0.95mm. Single quad drain triple source configuration.
PackageSOP Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCA8042(TE12L,QM) technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP Advance
Package Description
Heat Sinked Small-Outline No Lead
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
5
Package Height (mm)
0.95
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
1.27
Package Weight (g)
0.069
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS IV
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
45A
Material
Si
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
3.3@10VmOhm
Typical Gate Charge @ Vgs
56@10VnC
Typical Gate Charge @ 10V
56nC
Typical Input Capacitance @ Vds
2900@10VpF
Maximum Power Dissipation
1600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPCA8042(TE12L,QM) Datasheet
Download the complete datasheet for Toshiba TPCA8042(TE12L,QM) to view detailed technical specifications.
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