N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 32A continuous drain current. This surface-mount device is housed in an 8-pin SOP Advance package with heat sink capabilities, measuring 5x5x0.95mm. It offers a low drain-source on-resistance of 7.3mΩ at 10V Vgs and a typical gate charge of 43nC at 10V. The component supports a maximum power dissipation of 2800mW and operates within a temperature range of -55°C to 150°C.
PackageSOP Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCA8047-H(TE12LQM) technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP Advance
Package Description
Heat Sinked Small-Outline No Lead
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
5
Package Height (mm)
0.95
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
1.27
Package Weight (g)
0.069
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
32A
Material
Si
Maximum Drain Source Resistance
7.3@10VmOhm
Typical Gate Charge @ Vgs
43@10V|23@5VnC
Typical Gate Charge @ 10V
43nC
Typical Input Capacitance @ Vds
2590@10VpF
Maximum Power Dissipation
2800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPCA8047-H(TE12LQM) Datasheet
Download the complete datasheet for Toshiba TPCA8047-H(TE12LQM) to view detailed technical specifications.
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