P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This surface-mount device is housed in an 8-pin SOP Advance package with heat sink capabilities, measuring 5mm x 5mm x 0.95mm. It offers a low drain-source on-resistance of 3.7mOhm at 10V and a maximum power dissipation of 45000mW, operating across a temperature range of -55°C to 150°C. The component is configured as a single Quad Drain Triple Source.
PackageSOP Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCA8106 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP Advance
Package Description
Heat Sinked Small-Outline No Lead
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
5
Package Height (mm)
0.95
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
1.27
Package Weight (g)
0.069
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
40A
Material
Si
Maximum Drain Source Resistance
3.7@10VmOhm
Typical Gate Charge @ Vgs
130@10VnC
Typical Gate Charge @ 10V
130nC
Typical Input Capacitance @ Vds
4600@10VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba TPCA8106 Datasheet
Download the complete datasheet for Toshiba TPCA8106 to view detailed technical specifications.
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