P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This surface-mount device is housed in an 8-pin SOP Advance package with heat sink capabilities, measuring 5mm x 5mm x 0.95mm. It offers a low drain-source on-resistance of 3.7mOhm at 10V and a maximum power dissipation of 45000mW, operating across a temperature range of -55°C to 150°C. The component is configured as a single Quad Drain Triple Source.
PackageSOP Advance
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba TPCA8106 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP Advance |
| Package Description | Heat Sinked Small-Outline No Lead |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 5 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.069 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 40A |
| Material | Si |
| Maximum Drain Source Resistance | 3.7@10VmOhm |
| Typical Gate Charge @ Vgs | 130@10VnC |
| Typical Gate Charge @ 10V | 130nC |
| Typical Input Capacitance @ Vds | 4600@10VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPCA8106 Datasheet
Download the complete datasheet for Toshiba TPCA8106 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.