P-channel enhancement mode silicon power MOSFET designed for surface mount applications. Features a 30V drain-source voltage rating and a continuous drain current of 24A. This single MOSFET offers a low drain-source on-resistance of 9mΩ at 10V Vgs. Housed in an 8-pin SOP Advance package with heat sink capabilities, measuring 5x5x0.95mm, it supports a maximum power dissipation of 30,000mW.
PackageSOP Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCA8109 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP Advance |
| Package Description | Heat Sinked Small-Outline No Lead |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 5 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.069 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 30V |
| Maximum Continuous Drain Current | 24A |
| Material | Si |
| Maximum Drain Source Resistance | 9@10VmOhm |
| Typical Gate Charge @ Vgs | 56@10VnC |
| Typical Gate Charge @ 10V | 56nC |
| Typical Input Capacitance @ Vds | 2400@10VpF |
| Maximum Power Dissipation | 30000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TPCA8109 Datasheet
Download the complete datasheet for Toshiba TPCA8109 to view detailed technical specifications.
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