N-channel enhancement mode power MOSFET, 30V drain-source voltage, 20A continuous drain current. Features 12.9mOhm maximum drain-source resistance at 10V, with typical gate charge of 15nC at 10V and input capacitance of 1300pF at 10V. This single element device is housed in an 8-pin SOP Advance surface-mount package with heat sink, measuring 5mm x 5mm x 0.95mm. Operating temperature range is -55°C to 150°C.
PackageSOP Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCA8A05-H(TE12LQM) technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP Advance
Package Description
Heat Sinked Small-Outline No Lead
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
5
Package Height (mm)
0.95
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
1.27
Package Weight (g)
0.069
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
20A
Material
Si
Maximum Drain Source Resistance
12.9@10VmOhm
Typical Gate Charge @ Vgs
15@10V|7.4@5VnC
Typical Gate Charge @ 10V
15nC
Typical Input Capacitance @ Vds
1300@10VpF
Maximum Power Dissipation
2800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Toshiba TPCA8A05-H(TE12LQM) Datasheet
Download the complete datasheet for Toshiba TPCA8A05-H(TE12LQM) to view detailed technical specifications.
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