N-channel enhancement mode power MOSFET, 30V drain-source voltage, 20A continuous drain current. Features 12.9mOhm maximum drain-source resistance at 10V, with typical gate charge of 15nC at 10V and input capacitance of 1300pF at 10V. This single element device is housed in an 8-pin SOP Advance surface-mount package with heat sink, measuring 5mm x 5mm x 0.95mm. Operating temperature range is -55°C to 150°C.
PackageSOP Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCA8A05-H(TE12LQM) technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP Advance |
| Package Description | Heat Sinked Small-Outline No Lead |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 5 |
| Package Height (mm) | 0.95 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.069 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 20A |
| Material | Si |
| Maximum Drain Source Resistance | 12.9@10VmOhm |
| Typical Gate Charge @ Vgs | 15@10V|7.4@5VnC |
| Typical Gate Charge @ 10V | 15nC |
| Typical Input Capacitance @ Vds | 1300@10VpF |
| Maximum Power Dissipation | 2800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TPCA8A05-H(TE12LQM) Datasheet
Download the complete datasheet for Toshiba TPCA8A05-H(TE12LQM) to view detailed technical specifications.
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