P-channel enhancement mode power MOSFET featuring U-MOS V process technology. 30V drain-source voltage and 15A continuous drain current capability. 8-pin TSON EP Advance package with flat lead shape, measuring 3.1mm x 3.1mm x 0.85mm. Surface mountable with a 0.65mm pin pitch. Offers 18.9mOhm maximum drain-source resistance at 10V.
PackageTSON EP Advance
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba TPCC8102(TE12L,Q,M technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | TSON EP Advance |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.1 |
| Package Width (mm) | 3.1 |
| Package Height (mm) | 0.85 |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS V |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 15A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 18.9@10VmOhm |
| Typical Gate Charge @ Vgs | 26@10VnC |
| Typical Gate Charge @ 10V | 26nC |
| Typical Input Capacitance @ Vds | 1200@10VpF |
| Maximum Power Dissipation | 26000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TPCC8102(TE12L,Q,M Datasheet
Download the complete datasheet for Toshiba TPCC8102(TE12L,Q,M to view detailed technical specifications.
No datasheet is available for this part.