P-channel enhancement mode power MOSFET featuring U-MOS IV process technology. This single element transistor offers a maximum drain-source voltage of 20V and a continuous drain current of 9.4A. It is housed in an 8-pin TSON Advance package with a 0.65mm pin pitch, designed for surface mounting. Key electrical characteristics include a maximum drain-source on-resistance of 16mΩ at 4.5V gate-source voltage and a typical gate charge of 36nC at 5V.
PackageTSON Advance
MountingSurface Mount
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Technical Specifications
Toshiba TPCC8136 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | TSON Advance |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.1 |
| Package Width (mm) | 3.1 |
| Package Height (mm) | 0.85 |
| Seated Plane Height (mm) | 0.85 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | U-MOS IV |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 9.4A |
| Material | Si |
| Maximum Gate Threshold Voltage | 1.2V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 36@5VnC |
| Typical Input Capacitance @ Vds | 2650@10VpF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TPCC8136 Datasheet
Download the complete datasheet for Toshiba TPCC8136 to view detailed technical specifications.
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