N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 7A continuous drain current. This single Hex Drain transistor is housed in a compact 8-pin VS package with surface mount capability, measuring 2.9mm x 1.5mm x 0.8mm. It offers a low drain-source on-resistance of 21mΩ at 10V, a typical gate charge of 11.5nC, and input capacitance of 500pF at 10V. Operating across a wide temperature range from -55°C to 150°C, this silicon component has a maximum power dissipation of 2500mW.
PackageVS
MountingSurface Mount
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Technical Specifications
Toshiba TPCF8002 technical specifications.
General
| Package Family Name | VS |
| Package/Case | VS |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 0.8 |
| Mounting | Surface Mount |
| Configuration | Single Hex Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7A |
| Material | Si |
| Maximum Drain Source Resistance | 21@10VmOhm |
| Typical Gate Charge @ Vgs | 11.5@10VnC |
| Typical Gate Charge @ 10V | 11.5nC |
| Typical Input Capacitance @ Vds | 500@10VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPCF8002 Datasheet
Download the complete datasheet for Toshiba TPCF8002 to view detailed technical specifications.
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