Toshiba
TPCF8104(TE85L,F,M
SILICON P CHANNEL MOS TYPE (U-MOS IV) FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Toshiba TPCF8104(TE85L,F,M technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.76nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba TPCF8104(TE85L,F,M Datasheet
Download the complete datasheet for Toshiba TPCF8104(TE85L,F,M to view detailed technical specifications.
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