TPCF8302(TE85L,F,M)

P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 3A continuous drain current. This dual dual drain device is housed in an 8-pin VS package with a 0.65mm pin pitch, measuring 2.9mm x 1.5mm x 0.8mm. Key electrical characteristics include a maximum drain-source resistance of 59 mOhm at 4.5V, a typical gate charge of 11nC at 5V, and a typical input capacitance of 800pF at 10V. Operating across a temperature range of -55°C to 150°C, this surface-mount silicon component offers 1350mW maximum power dissipation.