N-channel enhancement mode power MOSFET featuring a 20V maximum drain-source voltage and 3A maximum continuous drain current. This single element device utilizes silicon material and is housed in an 8-pin VS surface mount package with dimensions of 2.9mm (L) x 1.5mm (W) x 0.8mm (H) and a 0.65mm pin pitch. Key electrical characteristics include a maximum drain-source resistance of 49 mOhm at 10V, typical gate charge of 7.5 nC at 5V, and typical input capacitance of 590 pF at 10V. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 1350mW.
PackageVS
MountingSurface Mount
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Technical Specifications
Toshiba TPCF8A01(TE85L,F,M technical specifications.
General
| Package Family Name | VS |
| Package/Case | VS |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 0.8 |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 49@10VmOhm |
| Typical Gate Charge @ Vgs | 7.5@5VnC |
| Typical Input Capacitance @ Vds | 590@10VpF |
| Maximum Power Dissipation | 1350mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TPCF8A01(TE85L,F,M Datasheet
Download the complete datasheet for Toshiba TPCF8A01(TE85L,F,M to view detailed technical specifications.
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