TPCM8003-H

N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 21A continuous drain current. This single element silicon MOSFET is housed in an 8-pin TSSOP lead-frame SMT package with gull-wing leads, measuring 3.5mm x 3.65mm x 0.75mm with a 0.8mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 12.9 mOhm at 10V, typical gate charge of 21nC at 10V, and typical input capacitance of 1433pF at 10V. Maximum power dissipation is 30000mW, with an operating temperature range of -55°C to 150°C.