N-channel Power MOSFET, 20V Drain-Source Voltage, 9.1A Continuous Drain Current. Features U-MOS IV process technology, 1.2V Gate Threshold Voltage, and 10mΩ Drain-Source Resistance at 4.5V Gate-Source Voltage. This 8-pin PS package is a lead-frame SMT with flat leads, measuring 2.9mm x 2.4mm x 0.8mm. Operating temperature range is -55°C to 150°C.
PackagePS
MountingSurface Mount
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Technical Specifications
Toshiba TPCP8002(TE85L,F,M technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
PS
Package/Case
PS
Lead Shape
Flat
Pin Count
8
PCB
8
Package Length (mm)
2.9
Package Width (mm)
2.4
Package Height (mm)
0.8
Seated Plane Height (mm)
0.8
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
U-MOS IV
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
9.1A
Material
Si
Maximum Gate Threshold Voltage
1.2V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
48@5VnC
Typical Input Capacitance @ Vds
3700@10VpF
Maximum Power Dissipation
1680mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba TPCP8002(TE85L,F,M Datasheet
Download the complete datasheet for Toshiba TPCP8002(TE85L,F,M to view detailed technical specifications.
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