P-channel enhancement mode silicon power MOSFET, 20V drain-source voltage, 7.2A continuous drain current. Features 18mΩ maximum drain-source on-resistance at 4.5V gate-source voltage. Surface mountable in an 8-pin PS package with flat leads, measuring 2.9mm x 2.4mm x 0.8mm. Operating temperature range from -55°C to 150°C.
PackagePS
MountingSurface Mount
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Technical Specifications
Toshiba TPCP8102(TE85L,F,M technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | PS |
| Package/Case | PS |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 2.4 |
| Package Height (mm) | 0.8 |
| Seated Plane Height (mm) | 0.8 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 7.2A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 33@5VnC |
| Typical Input Capacitance @ Vds | 2560@10VpF |
| Maximum Power Dissipation | 1680mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba TPCP8102(TE85L,F,M Datasheet
Download the complete datasheet for Toshiba TPCP8102(TE85L,F,M to view detailed technical specifications.
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