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Technical Specifications
Toshiba TPCP8201-TE85L.F technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 100ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 470pF |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.48W |
| Rds On Max | 50mR |
| Resistance | 0.05R |
| Turn-Off Delay Time | 260ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPCP8201-TE85L.F Datasheet
Download the complete datasheet for Toshiba TPCP8201-TE85L.F to view detailed technical specifications.
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