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Technical Specifications
Toshiba TPCP8401(TE85L,F) technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 12V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 9.3pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.96W |
| Radiation Hardening | No |
| Rds On Max | 3R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPCP8401(TE85L,F) Datasheet
Download the complete datasheet for Toshiba TPCP8401(TE85L,F) to view detailed technical specifications.
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