This single MOSFET is packaged in a surface mount SOP package with a tin and silver contact plating. It has a maximum operating temperature range of -55°C to 150°C and can handle a continuous drain current of 100A. The device's power dissipation is 2.8W, and it features a gate to source voltage of 20V with a fall time of 12ns and turn-off delay time of 52ns.
PackageSOP
MountingSurface Mount
Power2.8W
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Technical Specifications
Toshiba TPH4R008NH,L1Q(M technical specifications.
General
| Package/Case | SOP |
| Contact Plating | Tin, Silver |
| Continuous Drain Current (ID) | 100A |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 2.8W |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPH4R008NH,L1Q(M Datasheet
Download the complete datasheet for Toshiba TPH4R008NH,L1Q(M to view detailed technical specifications.
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