The TPH4R50ANH,L1Q is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 78W and a continuous drain current of 60A. The device has a drain to source resistance of 3.7mR and a gate to source voltage of 20V. It is packaged in a SOP package and is available on tape and reel.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Toshiba TPH4R50ANH,L1Q technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 4.5mR |
| Turn-Off Delay Time | 52ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPH4R50ANH,L1Q Datasheet
Download the complete datasheet for Toshiba TPH4R50ANH,L1Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.