PNP bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector current of 15A and a collector-emitter voltage (VCEO) of 230V. Offers a transition frequency of 30MHz and a minimum hFE of 80. Packaged in a 3-pin TO-3PL through-hole mount with a maximum power dissipation of 150W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Frequency30MHz
MountingThrough Hole
PolarityPNP
Power150W
Quick Jump:
Technical Specifications
Toshiba TTA1943(Q) technical specifications.
General
Collector Base Voltage (VCBO)
230V
Collector Emitter Breakdown Voltage
230V
Collector Emitter Saturation Voltage
-3V
Collector Emitter Voltage (VCEO)
230V
Collector-emitter Voltage-Max
3V
Emitter Base Voltage (VEBO)
-5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
Height
26mm
hFE Min
80
Length
20.5mm
Max Collector Current
15A
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Elements
1
Package Quantity
100
Packaging
Bulk
Polarity
PNP
Power Dissipation
150W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
30MHz
Width
5.2mm
Compliance
RoHS
Compliant
Datasheet
Toshiba TTA1943(Q) Datasheet
Download the complete datasheet for Toshiba TTA1943(Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
