The TTC0002(Q) is a single NPN transistor with a collector-emitter breakdown voltage of 160V and a maximum collector current of 18A. It operates at frequencies up to 30MHz and has a gain bandwidth product of 30MHz. The transistor is packaged in a through-hole package and is compliant with RoHS regulations. It has a maximum power dissipation of 180W and can operate over a temperature range of -55°C to 150°C.
Frequency30MHz
MountingThrough Hole
PolarityNPN
Power180W
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Technical Specifications
Toshiba TTC0002(Q) technical specifications.
General
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 2V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Lead Free | Lead Free |
| Max Collector Current | 18A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TTC0002(Q) Datasheet
Download the complete datasheet for Toshiba TTC0002(Q) to view detailed technical specifications.
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