NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 350V collector-emitter voltage and 0.5A continuous collector current. This single-element silicon transistor offers a maximum power dissipation of 1000mW and operates within a temperature range of -55°C to 150°C. The PW-Mini package is a 4-pin (3+Tab) lead-frame SMT with flat leads and a pin pitch of 1.5mm.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba TTC013 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | PW-Mini |
| Lead Shape | Flat |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Pin Pitch (mm) | 1.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 600V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 350V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 80@1mA@5V|100@50mA@5V|[email protected]@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Toshiba TTC013 Datasheet
Download the complete datasheet for Toshiba TTC013 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.