NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector current of 15A and a collector-emitter voltage (VCEO) of 230V. Offers a transition frequency of 30MHz and a minimum hFE of 80. Packaged in a 3-pin TO-3PL through-hole mount with a maximum power dissipation of 150W. Operates across a wide temperature range from -55°C to 150°C.
Frequency30MHz
MountingThrough Hole
PolarityNPN
Power150W
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Technical Specifications
Toshiba TTC5200(Q) technical specifications.
General
| Collector Base Voltage (VCBO) | 230V |
| Collector Emitter Breakdown Voltage | 230V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 230V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 26mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 20.5mm |
| Max Collector Current | 15A |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| Width | 5.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TTC5200(Q) Datasheet
Download the complete datasheet for Toshiba TTC5200(Q) to view detailed technical specifications.
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