The ULN2003AFWG is a surface mount bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It is packaged in a SOIC package and is available in a single unit quantity. The transistor is designed for surface mount applications and is packaged in cut tape. It can dissipate a maximum power of 1.25W.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Toshiba ULN2003AFWG,O,N,E technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba ULN2003AFWG,O,N,E Datasheet
Download the complete datasheet for Toshiba ULN2003AFWG,O,N,E to view detailed technical specifications.
No datasheet is available for this part.