The Toshiba ULN2003AFWG is a 7-channel NPN bipolar junction transistor with a collector-emitter voltage rating of 50V and a maximum collector current of 500mA. It is packaged in a surface-mount SOIC package and is suitable for operating temperatures between -40°C and 85°C. This transistor is not radiation hardened.
PackageSOIC
MountingSurface Mount
PolarityNPN
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Technical Specifications
Toshiba ULN2003AFWG(ONEHZA technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Elements | 7 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba ULN2003AFWG(ONEHZA Datasheet
Download the complete datasheet for Toshiba ULN2003AFWG(ONEHZA to view detailed technical specifications.
No datasheet is available for this part.