High-performance NPN Darlington transistor array, featuring seven elements per chip. This surface-mount component offers a maximum collector-emitter voltage of 50V and a continuous DC collector current of 0.5A. With a maximum power dissipation of 1250mW, it boasts a minimum DC current gain of 1000. Encased in a 16-pin SOL (Small Outline IC) package with gull-wing leads, it operates within a temperature range of -40°C to 85°C.
PackageSOL
MountingSurface Mount
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Technical Specifications
Toshiba ULN2003AFWG(OV,ELM technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOL
Package Description
Small Outline IC (L Lead)
Lead Shape
Gull-wing
Pin Count
16
PCB
16
Package Length (mm)
9.9
Package Width (mm)
3.94
Package Height (mm)
1.47
Seated Plane Height (mm)
1.73(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Array 7
Number of Elements per Chip
7
Maximum Collector-Emitter Voltage
50V
Maximum Continuous DC Collector Current
0.5A
Maximum Power Dissipation
1250mW
Maximum Collector-Emitter Saturation Voltage
1.1@100mA|1.3@200mA|1.6@350mAV
Minimum DC Current Gain
1000@350mA@2V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Compliance
Cage Code
S0562
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba ULN2003AFWG(OV,ELM Datasheet
Download the complete datasheet for Toshiba ULN2003AFWG(OV,ELM to view detailed technical specifications.
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