The ULN2004AFWG,N,E is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a maximum power dissipation of 1.25W and is packaged in a SOIC package. The transistor is suitable for a variety of applications, including those requiring high current and voltage handling. It is available in quantities of 2000 units, packaged in cut tape. The operating temperature range is not specified.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Toshiba ULN2004AFWG,N,E technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 1.6V |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Cut Tape |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba ULN2004AFWG,N,E Datasheet
Download the complete datasheet for Toshiba ULN2004AFWG,N,E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.