PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 175V collector-emitter voltage and 1A maximum DC collector current. This single-element silicon transistor offers 1000mW maximum power dissipation and a transition frequency of 100MHz minimum. Housed in a 3-pin TO-39 metal package (TO-205-AD), it operates from -65°C to 200°C.
PackageTO-39
MountingThrough Hole
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Technical Specifications
TT 2N3637-JQR technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AD |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Seated Plane Height (mm) | 6.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-205AD |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 175V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 175V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V |
| Maximum Transition Frequency | 100(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 57027, 73138,U1395 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
TT 2N3637-JQR Datasheet
Download the complete datasheet for TT 2N3637-JQR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.