
The 2N3806DCSM-JQR-A is a dual PNP bipolar junction transistor with a maximum collector-emitter voltage of 60V and a maximum DC collector current of 50mA. It has a maximum power dissipation of 500mW and a minimum DC current gain of 150 at 1mA and 10V. The device is packaged in a non-lead-frame surface mount technology (SMT) package, specifically a CLLCC-2, with a ceramic material and a pin pitch of 1.27mm. The transistor is suitable for use in a variety of applications, including general-purpose switching and amplification.
TT 2N3806DCSM-JQR-A technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | LLCC |
| Package/Case | CLLCC-2 |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 4.32 |
| Package Width (mm) | 6.22 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 500mW |
| Minimum DC Current Gain | 150@1mA@10V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for TT 2N3806DCSM-JQR-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.