NPN Bipolar Junction Transistor (BJT) designed for power applications. Features a maximum collector-emitter voltage of 100V and a continuous collector current of 50A. This single-element transistor is housed in a TO-3 metal package, a through-hole component with a 3-pin configuration and a tab for enhanced thermal management. Minimum DC current gain is 25 at 20A and 10V, with a typical transition frequency of 10MHz.
PackageTO-3
MountingThrough Hole
Quick Jump:
Technical Specifications
TT 2N6274-JQR technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-204-AA |
| Package/Case | TO-3 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 39.94(Max) |
| Package Width (mm) | 26.67(Max) |
| Package Height (mm) | 11.43(Max) |
| Seated Plane Height (mm) | 11.43(Max) |
| Pin Pitch (mm) | 11.18(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-204-AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 100V |
| Maximum DC Collector Current | 50A |
| Maximum Power Dissipation | 150000mW |
| Minimum DC Current Gain | 25@20A@10V |
| Maximum Transition Frequency | 10(Typ)MHz |
| Category | Bipolar Power |
Compliance
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
TT 2N6274-JQR Datasheet
Download the complete datasheet for TT 2N6274-JQR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.