The 2N6301SMD-JQR-A is a surface mount single NPN bipolar junction transistor with a maximum collector base voltage of 80V and a maximum DC collector current of 8A. It has a maximum power dissipation of 75W and is made of silicon material. The transistor operates within a temperature range of -65°C to 200°C and is suitable for use in bipolar power applications.
PackageSMD-1
MountingSurface Mount
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Technical Specifications
TT 2N6301SMD-JQR-A technical specifications.
General
| Package Family Name | SMD |
| Package/Case | SMD-1 |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 11.58(Max) |
| Package Width (mm) | 16.02(Max) |
| Package Height (mm) | 3.6(Max) |
| Seated Plane Height (mm) | 3.6(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 8A |
| Maximum Power Dissipation | 75000mW |
| Material | Si |
| Minimum DC Current Gain | 750@4A@3V|100@8A@3V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 57027, 73138,U1395 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
TT 2N6301SMD-JQR-A Datasheet
Download the complete datasheet for TT 2N6301SMD-JQR-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.