TT
2N6845
Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
PackageTO-39
MountingThrough Hole
Power20W
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Technical Specifications
TT 2N6845 technical specifications.
General
| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | -100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Power Dissipation | 20W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Threshold Voltage | -4V |
Compliance
| RoHS | Not Compliant |
Datasheet
TT 2N6845 Datasheet
Download the complete datasheet for TT 2N6845 to view detailed technical specifications.
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