TT
ALF08P16V
Power Field-Effect Transistor, 8A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
PackageTO-247
MountingThrough Hole
Power125W
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Technical Specifications
TT ALF08P16V technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
-8A
Drain to Source Voltage (Vdss)
-160V
Gate to Source Voltage (Vgs)
20V
Height
21.46mm
Input Capacitance
700pF
Length
16.26mm
Max Operating Temperature
150°C
Max Power Dissipation
125W
Mount
Through Hole
Power Dissipation
125W
Reach SVHC Compliant
No
RoHS Compliant
No
Turn-Off Delay Time
60ns
Turn-On Delay Time
120ns
Width
5.31mm
Compliance
RoHS
Not Compliant
Datasheet
TT ALF08P16V Datasheet
Download the complete datasheet for TT ALF08P16V to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.