NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage and 15A continuous collector current. This single-element silicon transistor offers a maximum power dissipation of 43750mW and operates across a temperature range of -65°C to 200°C. The 3-pin SMD-1 package, constructed from ceramic, has dimensions up to 11.58mm (L) x 16.02mm (W) x 3.6mm (H).
PackageSMD-1
MountingSurface Mount
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Technical Specifications
TT BDS11SMD-JQR technical specifications.
General
| Package Family Name | SMD |
| Package/Case | SMD-1 |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 11.58(Max) |
| Package Width (mm) | 16.02(Max) |
| Package Height (mm) | 3.6(Max) |
| Seated Plane Height (mm) | 3.6(Max) |
| Package Material | Ceramic |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 15A |
| Maximum Power Dissipation | 43750mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@4V|15@5A@4V|5@10A@4V |
| Maximum Transition Frequency | 3(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 57027, 73138,U1395 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
TT BDS11SMD-JQR Datasheet
Download the complete datasheet for TT BDS11SMD-JQR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.