PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 8A. Housed in a TO-257AB metal package with 3 pins and a tab, offering a pin pitch of 2.54mm. Maximum power dissipation is 43750mW, with a minimum DC current gain of 40. Operates across a wide temperature range from -65°C to 200°C.
TT BDS18-JQR-B technical specifications.
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