The BDV66B is a PNP transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 16A. It is packaged in a TO-247 case and is suitable for through-hole mounting. The transistor has a high current gain of 1000 and can operate at temperatures up to 150°C. It is not compliant with SVHC regulations.
PackageTO-247
PolarityPNP
Power125W
Quick Jump:
Technical Specifications
TT BDV66B technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| hFE Min | 1000 |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Polarity | PNP |
| Power Dissipation | 125W |
| Reach SVHC Compliant | No |
| Termination | Through Hole |
Compliance
| RoHS | Compliant |
Datasheet
TT BDV66B Datasheet
Download the complete datasheet for TT BDV66B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.