NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 150V and a continuous collector current of 1A. This single-element transistor is housed in a 3-pin TO-39 (TO-205-AD) metal package with through-hole mounting. Operating temperature range is -65°C to 200°C, with a maximum power dissipation of 795mW. Minimum DC current gain is 40 at 0.1A and 5V.
PackageTO-39
MountingThrough Hole
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Technical Specifications
TT BSW68-JQR-A technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-205-AD
Package/Case
TO-39
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Height (mm)
6.6(Max)
Seated Plane Height (mm)
6.6(Max)
Pin Pitch (mm)
2.54
Package Diameter (mm)
9.4(Max)
Package Material
Metal
Mounting
Through Hole
Jedec
TO-205AD
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
150V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
150V
Maximum DC Collector Current
1A
Maximum Power Dissipation
795mW
Material
Si
Minimum DC Current Gain
[email protected]@5V|[email protected]@5V|15@1A@5V
Maximum Transition Frequency
30(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Compliance
Cage Code
57027, 73138,U1395
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
TT BSW68-JQR-A Datasheet
Download the complete datasheet for TT BSW68-JQR-A to view detailed technical specifications.
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