TT
BUZ50B-220M
Power Field-Effect Transistor, 1.5A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Power Field-Effect Transistor, 1.5A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
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Technical Specifications
TT BUZ50B-220M technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-257AB |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | Compliant |
| Military Spec | False |
Datasheet
TT BUZ50B-220M Datasheet
Download the complete datasheet for TT BUZ50B-220M to view detailed technical specifications.
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