TT
D1014UK
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DP, 3 PIN
MountingScrew
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Technical Specifications
TT D1014UK technical specifications.
General
Continuous Drain Current (ID)
10A
Gate to Source Voltage (Vgs)
20V
Height
5.08mm
Input Capacitance
120pF
Length
18.92mm
Max Operating Temperature
200°C
Max Power Dissipation
87.5W
Mount
Screw
RoHS Compliant
Yes
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
TT D1014UK Datasheet
Download the complete datasheet for TT D1014UK to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.