TT
D1020UK
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DR, 5 PIN
MountingScrew
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Technical Specifications
TT D1020UK technical specifications.
General
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 70V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.08mm |
| Input Capacitance | 300pF |
| Length | 34.03mm |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 389W |
| Mount | Screw |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Width | 10.16mm |
Compliance
| RoHS | Compliant |
Datasheet
TT D1020UK Datasheet
Download the complete datasheet for TT D1020UK to view detailed technical specifications.
No datasheet is available for this part.
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