TT
DMD1010-A
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D1, 5 PIN
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D1, 5 PIN
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Technical Specifications
TT DMD1010-A technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
TT DMD1010-A Datasheet
Download the complete datasheet for TT DMD1010-A to view detailed technical specifications.
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