TT
IRFY430M
Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Technical Specifications
TT IRFY430M technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
TT IRFY430M Datasheet
Download the complete datasheet for TT IRFY430M to view detailed technical specifications.
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