TT
IRFY430M-T257
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
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Technical Specifications
TT IRFY430M-T257 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-257AA
Number of Elements
1
Compliance
RoHS
No
REACH
Compliant
Military Spec
False
Datasheet
TT IRFY430M-T257 Datasheet
Download the complete datasheet for TT IRFY430M-T257 to view detailed technical specifications.
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