Silicon NPN phototransistor for through-hole mounting, featuring a 2-pin T-1 package. Offers a collector-emitter breakdown voltage of 30V and a maximum collector current of 5.95mA. Operates within a temperature range of -40°C to 100°C with a maximum power dissipation of 100mW. This RoHS compliant component has a viewing angle of 25° and a peak sensitivity wavelength of 935nm.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OP505B technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Height
5.84mm
Lead Free
Lead Free
Lead Length
12.7mm
Length
4.19mm
Max Collector Current
5.95mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
25°
Wavelength
935nm
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
TT OP505B Datasheet
Download the complete datasheet for TT OP505B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.