
General purpose NPN phototransistor with a 930nm peak sensitivity. Features a 30V collector-emitter breakdown voltage and a 3mA maximum collector current. Operates within a -40°C to 100°C temperature range, with a 100mW maximum power dissipation. Packaged in a through-hole mount, top-view oriented case with a 25° viewing angle. RoHS compliant.
TT OP505D technical specifications.
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