General purpose NPN phototransistor with a 930nm peak sensitivity. Features a 30V collector-emitter breakdown voltage and a 3mA maximum collector current. Operates within a -40°C to 100°C temperature range, with a 100mW maximum power dissipation. Packaged in a through-hole mount, top-view oriented case with a 25° viewing angle. RoHS compliant.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
Quick Jump:
Technical Specifications
TT OP505D technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Height
5.84mm
Length
4.19mm
Max Breakdown Voltage
30V
Max Collector Current
3mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Output Voltage
30V
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
25°
DC Rated Voltage
30V
Wavelength
935nm
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
TT OP505D Datasheet
Download the complete datasheet for TT OP505D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
