NPN phototransistor chip for optical sensing applications. Features a 935nm wavelength, 30V collector-emitter breakdown voltage, and a maximum collector current of 5.95mA. Encased in a T-1 package with through-hole mounting and a 60° viewing angle. Operates within a temperature range of -40°C to 100°C, with a maximum power dissipation of 100mW. RoHS compliant and lead-free.
PackageT
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OP506A technical specifications.
General
Package/Case
T
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Lead Free
Lead Free
Lead Length
12.7mm
Max Collector Current
5.95mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Top View
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
60°
DC Rated Voltage
30V
Wavelength
935nm
Compliance
RoHS
Compliant
Datasheet
TT OP506A Datasheet
Download the complete datasheet for TT OP506A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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