NPN phototransistor with a 60° viewing angle, designed for through-hole mounting. Features a 30V collector-emitter breakdown voltage and a maximum collector current of 4.7mA. Operates within a temperature range of -40°C to 100°C, with a maximum power dissipation of 100mW. This silicon chip utilizes a transparent lens and is RoHS compliant.
PackageRadial
MountingThrough Hole
PolarityNPN
Power100mW
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Technical Specifications
TT OP550A technical specifications.
General
Package/Case
Radial
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Height
5.84mm
Lead Free
Lead Free
Lead Length
12.7mm
Lens Style
TRANSPARENT
Max Collector Current
4.7mA
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Mount
Through Hole
Number of Elements
1
Operating Supply Voltage
5V
Orientation
Side View
Packaging
Bulk
Polarity
NPN
Power Consumption
100mW
Power Dissipation
100mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
60°
DC Rated Voltage
30V
Wavelength
935nm
Compliance
RoHS
Compliant
Datasheet
TT OP550A Datasheet
Download the complete datasheet for TT OP550A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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