NPN phototransistor with a 930nm wavelength, designed for through-hole mounting in a TO-18 hermetically sealed package. Features a maximum collector current of 50mA and a collector-emitter breakdown voltage of 30V. Offers a fall time of 7000ns and a maximum power dissipation of 250mW, operating within a temperature range of -65°C to 125°C. This RoHS compliant component has a 25° viewing angle.
PackageTO-18
MountingThrough Hole
PolarityNPN
Power250mW
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Technical Specifications
TT OP803SL technical specifications.
General
Package/Case
TO-18
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Fall Time
7000ns
Height
6.86mm
Lead Free
Lead Free
Lead Length
12.7mm
Length
5.84mm
Max Breakdown Voltage
30V
Max Collector Current
50mA
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Orientation
Top View
Output Voltage
30V
Package Material
SILICON
Package Quantity
25
Packaging
Bulk
Polarity
NPN
Power Consumption
250mW
Power Dissipation
250mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Viewing Angle
25°
DC Rated Voltage
30V
Wavelength
890nm
Width
5.84mm
Compliance
RoHS
Compliant
Datasheet
TT OP803SL Datasheet
Download the complete datasheet for TT OP803SL to view detailed technical specifications.
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