Transistor output slotted optical sensor featuring a 1-channel, 1-element design with a 9.53mm slot width. This component offers a 30V collector-emitter breakdown voltage and a 50mA forward current. Operating within a -40°C to 80°C temperature range, it utilizes infrared touchscreen technology with an 890nm wavelength. The device is RoHS compliant, housed in a plastic package, and supports chassis or screw mounting.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB801W55Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Input Current
20mA
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Screw
Number of Channels
1
Number of Elements
1
Output Configuration
Phototransistor
Output Voltage
30V
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Radiation Hardening
No
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Sensing Distance
0.375inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB801W55Z Datasheet
Download the complete datasheet for TT OPB801W55Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.