Transistor output slotted optical sensor featuring a 9.53mm slot width and 1-channel operation. This RoHS compliant device utilizes an infrared touchscreen with an 890nm wavelength and a sensing distance of 0.375 inches. Key electrical specifications include a 30V collector-emitter breakdown voltage, 50mA forward current, and 30mA maximum collector current. Operating across a temperature range of -40°C to 80°C, it is housed in a plastic package suitable for chassis mount with screw attachment.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB810W55Z technical specifications.
General
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
30V
Forward Current
50mA
Input Current
20mA
Max Breakdown Voltage
30V
Max Collector Current
30mA
Max Operating Temperature
80°C
Min Operating Temperature
-40°C
Mount
Chassis Mount, Screw
Number of Elements
1
Output Configuration
Phototransistor
Output Voltage
30V
Package Quantity
25
Packaging
Bulk
Power Dissipation
100mW
Reverse Breakdown Voltage
2V
RoHS Compliant
Yes
Sensing Distance
0.375inch
Touchscreen
Infrared (IR)
Wavelength
890nm
Compliance
RoHS
Compliant
Datasheet
TT OPB810W55Z Datasheet
Download the complete datasheet for TT OPB810W55Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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