Transistor output slotted optical sensor featuring a 9.53mm slot width and 1-channel operation. This RoHS compliant device utilizes an infrared touchscreen with an 890nm wavelength and a sensing distance of 0.375 inches. Key electrical specifications include a 30V collector-emitter breakdown voltage, 50mA forward current, and 30mA maximum collector current. Operating across a temperature range of -40°C to 80°C, it is housed in a plastic package suitable for chassis mount with screw attachment.
MountingChassis Mount, Screw
Power100mW
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Technical Specifications
TT OPB810W55Z technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Input Current | 20mA |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 30mA |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Output Voltage | 30V |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.375inch |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Compliant |
Datasheet
TT OPB810W55Z Datasheet
Download the complete datasheet for TT OPB810W55Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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