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Technical Specifications
TT OPB820S10 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 30V |
| Forward Current | 50mA |
| Max Breakdown Voltage | 30V |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole, Screw |
| Number of Elements | 1 |
| Operating Supply Voltage | 30V |
| Output Configuration | Phototransistor |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 2V |
| RoHS Compliant | No |
| Sensing Distance | 0.08inch |
| Touchscreen | Infrared (IR) |
| Wavelength | 890nm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
TT OPB820S10 Datasheet
Download the complete datasheet for TT OPB820S10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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